smd type 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source KDB3652 (fdb3652) features r ds(on) = 14m (typ.), v gs = 10v, i d = 61a q g(tot) = 41nc (typ.), v gs = 10v low miller charge low q rr body diode uis capability (single pulse and repetitive pulse) absolute maximum ratings ta = 25 parameter symbol rating unit draintosourcevoltage v dss 100 v gate to source voltage v gss 20 v drain current-continuous t c =25 61 a t a =25 9a power dissipation 150 w derate above 25 1.0 w/ thermal resistance junction to ambient r ja 43 /w thermal resistance, junction-to-case r jc 1.0 /w channel temperature t ch 175 storage temperature t stg -55to+175 p d i d smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com 1of 2 http://www.twtysemi.com
smd type electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain to source breakdown voltage v dss i d =250a v gs =0v 105 v v ds =80v,v gs =0 1 a v ds =80v,v gs =0,t c =150 250 a gate leakage current i gss v gs = 20v 100 na gate threshold voltage v gs(th) v ds =v gs ,i d =250a 2.0 4.0 v v gs =10v,i d =61a 0.014 0.016 v gs =6v,i d =30a 0.018 0.026 v gs =10v,i d =61a,t c =175 0.035 0.043 input capacitance c iss 2880 pf output capacitance c oss 390 pf reverse transfer capacitance c rss 100 pf total gate charge at 10v q g(tot) v gs = 0v to 10v 41 53 nc threshold gate charge q g(th) v gs =0vto2v 5 6.5 nc gate to source gate charge q gs 15 nc gate charge threshold to plateau q gs2 10 nc gate to drain "miller" charge q gd 10 nc turn-on time t on 146 ns turn-on delay time t d(on) 12 ns rise time t r 85 ns turn-off delay time t d(off) 26 ns fall time t f 45 ns turn-off time t off 107 ns i sd =61a 1.25 v i sd =30a 1.0 v reverse recovery time tr r i sd = 61a, d isd /d t =100a/s 62 ns reverse recovered charge q rr i sd = 61a, d isd /d t =100a/s 45 nc source to drain diode voltage v sd v ds =25v,v gs =0,f=1mhz v ds =50v,i d =61a,i g =1.0ma drain cut-off current i dss v dd =50v,i d =61a, v gs =10v,r gen =6.8 drain to source on-state resistance r ds(on) smd type KDB3652 (fdb3652) smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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